Photoreceiver / 鼎昕科技(股)公司



		-Si and InGaAs Photodiodes -Wavelength Range from 320 to 1700 nm -Bandwidth from 10 kHz up to 2 GHz -Max. Conversion Gain 4.8 x 103 V/W -Min. NEP approx. 14 pW/√Hz


		By combining state of the art photodiodes with the proven and outstanding FEMTO GHz amplifier technology we designed a new family of photoreceivers with a remarkable performance. The HSA-X-S offers an upper bandwidth limit of 2 GHz. Two models with either a fast Si or InGaAs photodiode cover a spectral range from 320 to 1000 nm and 850 to 1700 nm, respectively. Due to the sophisticated amplifier design


		The minimum NEP is just 14 pW/√Hz at a transimpedance of 5 x 103 V/A. This allows for the measurement of optical power levels in the ？W range with GHz speed. For the HSA-X-S-1G4-SI with silicon photodiode the effective active diameter is a remarkably large 0.8 mm due to the use of a ball lens in front of the detector chip.