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霍爾量測系統
 
 
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For measuring Carrier Concentration, Mobility, Resistivity and Hall Coefficient that should be pre-checked in order to grasp the electrical
specifications of semiconductor device. Low temperature (77K) test system and magnetic flux density input system. Materials for Measurement Si, SiGe, SiC, GaAs, InGaAs, InP, GaN, TCO (including ITO), AlZnO, FeCdTe, ZnO,etc., all of semiconductors can be measured (N/P-type).
Input Current: 1nA ~20mA, Resistivity(Ωㆍcm):10,
Concentration (1/cm3): 107~1021, Mobility(cm2/Voltㆍsec): 1~107,
Magnetic Flux Density(T): 0.27, 0.31, 0.37, 0.51, 1
HMS3000: 77K and 300K
HMS3500: RT ~ 500° C Variable temperature
HMS5000: 77K ~ 350K Variable temperature
   Hall Effect Measurement System
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